p-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm2601 pin description ordering and marking information features applications absolute maximum ratings (t a = 25 c unless otherwise noted) ? -20v/-3a , r ds(on) =80m ? (typ.) @ v gs =-4.5v r ds(on) =110m ? (typ.) @ v gs =-2.5v ? ? ? ? ? super high dense cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? sot-23-6 package ? power management in notebook computer , portable equipment and battery powered systems. symbol parameter rating unit v dss drain-source voltage -20 v gss gate-source voltage 8 v i d * maximum drain current ? continuous -3 i dm maximum drain current ? pulsed -10 a * surface mounted on fr4 board, t 10 sec. top view of sot-23-6 apm2601 handling code temp. range package code package code c : sot-23-6 operation junction temp. range c : -55 to 150 c handling code tr : tape & reel apm2601 c : m01x x - date code g d d d 1 2 3 6 4 5 d s p-channel mosfet g d s ddd
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 2 apm2601 notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) symbol parameter rating unit t a =25 c 1.25 p d maximum power dissipation t a =100 c 0.5 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja thermal resistance ? junction to ambient 100 c/w apm2601 symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =-250 a -20 v i dss zero gate voltage drain current v ds =-16v , v gs =0v -1 a v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -0.45 -1.2 v i gss gate leakage current v gs = 8v , v ds =0v 100 na v gs =-4.5v , i ds =-3a 80 100 r ds(on) a drain-source on-state resistance v gs =-2.5v , i ds =-2a 110 135 m ? v sd a diode forward voltage i sd =-1.25a , v gs =0v -0.7 -1.3 v dynamic b q g total gate charge 6.4 8 q gs gate-source charge 1 q gd gate-drain charge v ds =-10v , i ds =-1a v gs =-4.5v 1.8 nc t d(on) turn-on delay time 818 t r turn-on rise time 410 t d(off) turn-off delay time 20 45 t f turn-off fall time v dd =-10v , i ds =-1a , v gen =-4.5v , r g =6 ? 716 ns c iss input capacitance 550 c oss output capacitance 265 c rss reverse transfer capacitance v gs =0v v ds =-15v frequency=1.0mhz 115 pf electrical characteristics (t a = 25 c unless otherwise noted)
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 3 apm2601 0246810 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 012345678910 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 typical characteristics -i d- drain current (a) transfer characteristics t j =-55c t j =25c t j =125c -v gs - gate-to-source voltage (v) threshold voltage vs. junction temperature tj - junction temperature (c) -v gs(th)- threshold voltage (v) (normalized) -i ds =250ua r ds(on) -on-resistance ( ? ) on-resistance vs. drain current -v gs =2.5v -i d - drain current (a) -v gs =4.5v -v gs =1v output characteristics -i d -drain current (a) -v gs =3,4.5,6,7,8v -v gs =2v -v ds - drain-to-source voltage (v) -v gs =1.5v
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 4 apm2601 02468 0 1 2 3 4 5 12345678 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0 5 10 15 20 0 100 200 300 400 500 600 700 800 -50-25 0 255075100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 typical characteristics (cont.) r ds(on) -on-resistance ( ? ) (normalized) on-resistance vs. junction temperature -v gs =4.5v -i d =3a t j - junction temperature (c) -v ds - drain-to-source voltage (v) capacitance capacitance (pf) ciss coss crss -v gs - gate-to-source voltage (v) r ds(on) -on-resistance ( ? ) -i d =3a on-resistance vs. gate-to-source voltage gate charge q g - gate charge (nc) -v gs -gate-source voltage (v) -v ds =10v -i d =1a frequency=1mhz
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 5 apm2601 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 0.01 0.1 1 10 100 0 2 4 6 8 10 12 14 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 typical characteristics (cont.) power (w) single pulse power time (sec) square wave pulse duration (sec) source-drain diode forward voltage -i s -source current (a) t j =150c t j =25c -v sd -source-to-drain voltage (v) normalized effective transient thermal impedance normalized thermal transient impedence, junction to ambient 1.duty cycle, d=t1/t2 2.per unit base=r thja =100c/w 3.t jm -t a =p dm z thja duty cycle=0.5 d=0.2 d=0.1 d=0.05 d=0.02 single pulse d=0.01
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 6 apm2601 packaging information sot-23-6 millimeters inches dim min. max. min. max. a 1.00 1.45 0.0394 0.0571 a1 0.00 0.15 0.0000 0.0591 a2 0.70 1.25 0.0276 0.0492 b 0.35 0.55 0.0138 0.0217 d 2.70 3.10 0.1063 0.1220 e 1.40 1.80 0.50551 0.0709 e 1.90 bsc 0.07480 bsc h 2.60 3.00 0.1024 0.1181 l 0.30 - 000118 - l1 0.08 0.25 0.0031 0.0098 l2 0.60 ref 0.024 ref 0 10 0 10 s1 0.85 1.05 0.0335 0.0413 d e h 123 4 6 s1 d a2 a a1 l2 l l1 e 5
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 7 apm2601 physical specifications terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. reflow condition (ir/convection or vpr reflow) reference jedec standard j-std-020a april 1999 classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max. temperature maintained above 183 c 60 ~ 150 seconds time within 5 c of actual peak temperature 10 ~ 20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215~ 219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c pre-heat temperature 183 c peak temperature time temperature
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 8 apm2601 carrier tape & reel dimensions a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program a pp lication a b c j t1 t2 w p e 178 1 72 1.0 13.0 + 0.2 2.5 0.15 8.4 2 1.5 0.3 8.0+ 0.3 - 0.3 4 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-23-6 3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03
copyright ? anpec electronics corp. rev. a.1 - jun., 2003 www.anpec.com.tw 9 apm2601 application carrier width cover tape width devices per reel sot-23-6 8 5.3 3000 customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions
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